Invention Grant
- Patent Title: Wafer processing method
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Application No.: US17095050Application Date: 2020-11-11
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Publication No.: US11380550B2Publication Date: 2022-07-05
- Inventor: Masaru Nakamura
- Applicant: DISCO CORPORATION
- Applicant Address: JP Tokyo
- Assignee: DISCO CORPORATION
- Current Assignee: DISCO CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Greer Burns & Crain Ltd.
- Priority: JPJP2019-212672 20191125
- Main IPC: H01L21/304
- IPC: H01L21/304 ; H01L21/78 ; B23K26/57 ; B23K26/361 ; B23K101/40

Abstract:
A wafer processing method for processing a wafer of a two-layer structure having a second wafer laminated on a front surface of a first wafer includes a stepped part forming step of cutting from the second wafer side to a peripheral surplus region of the first wafer to a depth corresponding to a finished thickness of the first wafer, thereby removing a chamfered part formed at a peripheral end of the second wafer and forming an annular stepped part in the peripheral surplus region of the first wafer, and a second wafer griding step of, after the stepped part forming step is carried out, grinding an exposed surface of the second wafer to make the second wafer to have a predetermined thickness.
Public/Granted literature
- US20210159080A1 WAFER PROCESSING METHOD Public/Granted day:2021-05-27
Information query
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