Invention Grant
- Patent Title: Semiconductor device with a work function layer having a concentration of fluorine
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Application No.: US16939364Application Date: 2020-07-27
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Publication No.: US11380549B2Publication Date: 2022-07-05
- Inventor: Jung-Shiung Tsai , Chung-Chiang Wu , Wei-Fan Liao , Han-Ti Hsiaw
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/78 ; H01L29/40 ; H01L29/49 ; H01L21/28
Abstract:
A semiconductor device and method of manufacture are provided. In an embodiment a metal layer is formed over a substrate using a fluorine-free deposition process, a nucleation layer is formed over the metal layer using a fluorine included deposition process, and a fill material is formed to fill an opening and form a gate stack.
Information query
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