Invention Grant
- Patent Title: Voltage supply circuit, memory cell arrangement, and method for operating a memory cell arrangement
-
Application No.: US16861611Application Date: 2020-04-29
-
Publication No.: US11380400B2Publication Date: 2022-07-05
- Inventor: Marko Noack
- Applicant: Ferroelectric Memory GmbH
- Applicant Address: DE Dresden
- Assignee: Ferroelectric Memory GmbH
- Current Assignee: Ferroelectric Memory GmbH
- Current Assignee Address: DE Dresden
- Agency: Hickman Becker Bingham Ledesma LLP
- Agent Malgorzata A. Kulczycka
- Priority: DE102019111965.0 20190508
- Main IPC: G11C16/12
- IPC: G11C16/12 ; G11C16/26 ; G11C16/30 ; G11C5/14 ; G11C7/10 ; G11C11/22 ; G11C8/08 ; G11C7/12

Abstract:
In various aspects, a voltage supply circuit may include a first controlled voltage converter circuit including a first voltage converter and a first control circuit, wherein the first control circuit is configured to receive an input voltage and control the first voltage converter to output a first output voltage having a predefined relationship to the received input voltage; and a second controlled voltage converter circuit including a second voltage converter and a second control circuit, wherein the second control circuit is configured to receive the first output voltage and control the second voltage converter to output a second output voltage having a predefined relationship to the received first output voltage.
Information query