A set of memory cells in a data block of a memory component is sampled. A distribution statistic is generated for the data block based on a reliability statistic for each of the set of sampled memory cells. A determination is made based on the distribution statistic of whether the read disturb stress is uniformly or non-uniformly distributed across the data block. In response to a determination that the read disturb stress is non-uniformly distributed across the data block, a first subset of the data block is relocated to another data block of the memory component. The first subset of the data block is associated with a higher concentration of read disturb stress than other subsets of the data block.