Invention Grant
- Patent Title: Method for producing a circuit which is optimized for protection against radiation
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Application No.: US15734483Application Date: 2019-06-17
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Publication No.: US11378616B2Publication Date: 2022-07-05
- Inventor: Cédric Autie , Thibault Porteboeuf
- Applicant: SAFRAN ELECTRONICS & DEFENSE
- Applicant Address: FR Paris
- Assignee: SAFRAN ELECTRONICS & DEFENSE
- Current Assignee: SAFRAN ELECTRONICS & DEFENSE
- Current Assignee Address: FR Paris
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Priority: FR1855484 20180621
- International Application: PCT/EP2019/065919 WO 20190617
- International Announcement: WO2019/243278 WO 20191226
- Main IPC: G01R31/28
- IPC: G01R31/28 ; G01R31/3185 ; G01C21/16 ; G06F30/337

Abstract:
A production method for producing a circuit optimized to be protected against radiation includes a preliminary characterization stage performed on a reference circuit. The preliminary characterization stage includes the steps of: irradiating the reference circuit a plurality of times; after each irradiation, if one or more reference elements of the reference circuit have failed, locating said reference element(s); and mapping the impact of the irradiations on the reference surface of the reference circuit. The production method further includes an optimization stage comprising the step of adapting the position of at least one optimized radiation-sensitive element on at least one optimized surface of the optimized circuit as a function of the mapping performed on the reference circuit.
Public/Granted literature
- US20210247441A1 METHOD FOR PRODUCING A CIRCUIT WHICH IS OPTIMIZED FOR PROTECTION AGAINST RADIATION Public/Granted day:2021-08-12
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