Invention Grant
- Patent Title: Device and method for monitoring the health of a power semiconductor die
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Application No.: US16479850Application Date: 2018-02-26
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Publication No.: US11378612B2Publication Date: 2022-07-05
- Inventor: Nicolas Degrenne , Stefan Mollov , Jeffrey Ewanchuk
- Applicant: MITSUBISHI ELECTRIC CORPORATION
- Applicant Address: JP Tokyo
- Assignee: MITSUBISHI ELECTRIC CORPORATION
- Current Assignee: MITSUBISHI ELECTRIC CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: EP17305366 20170329
- International Application: PCT/JP2018/008189 WO 20180226
- International Announcement: WO2018/180222 WO 20181004
- Main IPC: G01R31/26
- IPC: G01R31/26 ; G01N21/95 ; G01R31/265
Abstract:
A device having at least one power semiconductor die coated with a metallization and at least one light guide having two opposite ends. The first end is able to be connected at least to a light source and to a light receiver. The second end is permanently fixed facing to a surface of the metallization such that to form a light path towards said surface and a light path from said surface.
Public/Granted literature
- US20210172994A1 DEVICE AND METHOD FOR MONITORING POWER SEMICONDUCTOR DIE Public/Granted day:2021-06-10
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