Invention Grant
- Patent Title: Semiconductor integrated circuit device and current detection circuit
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Application No.: US17002097Application Date: 2020-08-25
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Publication No.: US11378598B2Publication Date: 2022-07-05
- Inventor: Tomohiro Ando , Kazuhiro Taguchi
- Applicant: KABUSHIKI KAISHA TOSHIBA , TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
- Applicant Address: JP Tokyo; JP Tokyo
- Assignee: KABUSHIKI KAISHA TOSHIBA,TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
- Current Assignee: KABUSHIKI KAISHA TOSHIBA,TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
- Current Assignee Address: JP Tokyo; JP Tokyo
- Agency: Holtz, Holtz & Volek PC
- Priority: JPJP2020-037780 20200305
- Main IPC: G01R19/10
- IPC: G01R19/10 ; H03F3/45

Abstract:
According to an embodiment, a semiconductor integrated circuit device has a first switching element that is connected between first and second nodes, a second switching element that is connected between the first node and a third node and outputs a current that is 1/K times as much as an output current of the first switching element, and an amplifier that controls, by a signal provided by amplifying a voltage difference between the third node and a fourth node, a conduction state of a third switching element that is connected between the fourth node and a fifth node.
Public/Granted literature
- US20210278445A1 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND CURRENT DETECTION CIRCUIT Public/Granted day:2021-09-09
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