Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16902923Application Date: 2020-06-16
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Publication No.: US11367651B2Publication Date: 2022-06-21
- Inventor: Won Keun Chung , Joon Gon Lee , Rak Hwan Kim , Chung Hwan Shin , Do Sun Lee , Nam Gyu Cho
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2019-0086802 20190718
- Main IPC: H01L21/768
- IPC: H01L21/768

Abstract:
A semiconductor device includes a first interlayer insulating film; a conductive connection structure provided in the first interlayer insulating film; a second interlayer insulating film provided on the first interlayer insulating film; a wiring structure provided in the second interlayer insulating film and connected to the conductive connection structure; and an insertion liner interposed between an upper surface of the conductive connection structure and the wiring structure, the insertion liner including carbon.
Public/Granted literature
- US20210020500A1 SEMICONDUCTOR DEVICE Public/Granted day:2021-01-21
Information query
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