Invention Grant
- Patent Title: Silicon-oxide-nitride-oxide-silicon based multi-level non-volatile memory device and methods of operation thereof
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Application No.: US17330179Application Date: 2021-05-25
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Publication No.: US11367481B2Publication Date: 2022-06-21
- Inventor: Venkataraman Prabhakar , Krishnaswamy Ramkumar , Vineet Agrawal , Long Hinh , Swatilekha Saha , Santanu Kumar Samanta , Michael Amundson , Ravindra M. Kapre
- Applicant: Cypress Semiconductor Corporation
- Applicant Address: US CA San Jose
- Assignee: Cypress Semiconductor Corporation
- Current Assignee: Cypress Semiconductor Corporation
- Current Assignee Address: US CA San Jose
- Main IPC: G11C11/56
- IPC: G11C11/56 ; G06N3/063 ; G11C16/04 ; G11C16/08 ; G11C16/16 ; G11C16/24 ; G11C16/26 ; G11C16/34 ; H01L27/11524 ; H01L27/11529 ; H01L27/1157 ; H01L27/11573 ; H01L29/66 ; H01L29/78 ; H01L29/792

Abstract:
A semiconductor inference device that has a non-volatile memory (NVM) array including NVM cells arranged in rows and columns, in which each NVM cell comprises a charge trapping transistor configured to store one of N×analog values corresponding to N×levels of its drain current (ID) or threshold voltage (VT) levels, representing N×weight values for multiply accumulate (MAC) operations. The semiconductor inference device also includes digital-to-analog (DAC) function and multiplexor (mux) function configured to generate an analog MAC result based on the digital inputs converted results and the weight values read results, and analog-to-digital (ADC) function configured to convert the analog MAC result of the mux function to a digital value. Other embodiments of the semiconductor inference device and related methods and systems are also disclosed.
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