- Patent Title: Allyloxy derivative, resist underlayer forming composition using the same, and method of manufacturing resist underlayer and semiconductor device using the same
-
Application No.: US16760908Application Date: 2018-10-30
-
Publication No.: US11366389B2Publication Date: 2022-06-21
- Inventor: Shigemasa Nakasugi , Hiroshi Yanagita , Takashi Sekito , Yusuke Hama , Yuriko Matsuura
- Applicant: Merck Patent GmbH
- Applicant Address: DE Darmstadt
- Assignee: Merck Patent GmbH
- Current Assignee: Merck Patent GmbH
- Current Assignee Address: DE Darmstadt
- Agency: Faegre Drinker Biddle & Reath LLP
- Priority: JPJP2017-212054 20171101
- International Application: PCT/EP2018/079621 WO 20181030
- International Announcement: WO2019/086402 WO 20190509
- Main IPC: G03F7/11
- IPC: G03F7/11 ; C08G61/02 ; C07C43/215 ; C09D149/00 ; H01L21/027 ; H01L21/311 ; H01L21/768
Abstract:
The present invention provides a resist underlayer forming composition, which is well in heat resistance and gap filling. Further, the present invention provides methods of manufacturing a resist underlayer and semiconductor device using it. [Means for Solution] A composition comprising a allyloxy derivative having a specific group and a solvent, and methods of manufacturing a resist underlayer and semiconductor device using it.
Public/Granted literature
Information query
IPC分类:
