Invention Grant
- Patent Title: Memory device based on multi-bit perpendicular magnetic tunnel junction
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Application No.: US16688510Application Date: 2019-11-19
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Publication No.: US11296276B2Publication Date: 2022-04-05
- Inventor: Jea Gun Park , Jong Ung Baek , Kei Ashiba , Jin Young Choi , Mi Ri Park , Hyun Gyu Lee , Han Sol Jun , Sun Hwa Jung
- Applicant: Industry-University Cooperation Foundation Hanyang University
- Applicant Address: KR Seoul
- Assignee: Industry-University Cooperation Foundation Hanyang University
- Current Assignee: Industry-University Cooperation Foundation Hanyang University
- Current Assignee Address: KR Seoul
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2019-0140529 20191105
- Main IPC: H01L43/02
- IPC: H01L43/02 ; G11C11/15 ; H01L27/22 ; H01L43/10
Abstract:
Disclosed is a memory device including a multi-bit perpendicular magnetic tunnel junction, wherein the multi-bit perpendicular magnetic tunnel junction includes an upper synthetic antiferromagnetic layer, pinned layer, lower dual free layer, and upper free layer formed in a laminated manner between a top electrode and a bottom electrode.
Public/Granted literature
- US20210135091A1 MEMORY DEVICE BASED ON MULTI-BIT PERPENDICULAR MAGNETIC TUNNEL JUNCTION Public/Granted day:2021-05-06
Information query
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