Invention Grant
- Patent Title: Semiconductor heterojunction, field effect transistor and photodetector including the same
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Application No.: US16854252Application Date: 2020-04-21
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Publication No.: US11296250B2Publication Date: 2022-04-05
- Inventor: Michael Hsuan-Yi Huang , An-Ting Lee , Chih-Shan Tan , Pei-Lun Hsieh
- Applicant: National Tsing Hua University
- Applicant Address: TW Hsinchu
- Assignee: National Tsing Hua University
- Current Assignee: National Tsing Hua University
- Current Assignee Address: TW Hsinchu
- Agency: The Webb Law Firm
- Priority: TW109100987 20200110
- Main IPC: H01L31/102
- IPC: H01L31/102 ; H01L31/112 ; H01L31/0336

Abstract:
The present disclosure provides a semiconductor heterojunction. The semiconductor heterojunction includes a bottom semiconductor, a top semiconductor and an electrode substrate. An upper surface of the bottom semiconductor includes a first facet. A lower surface of the top semiconductor includes a second facet, and the lower surface of the top semiconductor is contacted with the upper surface of the bottom semiconductor. The electrode substrate is disposed below the bottom semiconductor.
Public/Granted literature
- US20210217920A1 Semiconductor Heterojunction, Field Effect Transistor and Photodetector Including the Same Public/Granted day:2021-07-15
Information query
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