An oxide thin-film transistor includes a substrate; a first gate electrode formed on the substrate; a gate insulator formed on the first gate electrode; an oxide semiconductor layer formed on the gate insulator to correspond to the first gate electrode; source/drain electrodes formed to be spaced from each other on the oxide semiconductor layer and formed in a shape of a plurality of island patterns; a passivation layer formed on the source/drain electrodes, where the source/drain electrodes include a first area formed in a direction of the first gate electrode with respect to a horizontal plane of the substrate; and a second area formed in an opposite direction to the first area, and the plurality of island patterns are formed such that the first areas are separated from each other and thus have resistance to external stress.