Invention Grant
- Patent Title: Lateral double diffused metal oxide semiconductor and method of fabricating same
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Application No.: US16924737Application Date: 2020-07-09
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Publication No.: US11296222B2Publication Date: 2022-04-05
- Inventor: Joo-Hyung Kim
- Applicant: DB HiTek Co., Ltd.
- Applicant Address: KR Seoul
- Assignee: DB HiTek Co., Ltd.
- Current Assignee: DB HiTek Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Central California IP Group, P.C.
- Agent Andrew D. Fortney
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L21/76 ; H01L29/06 ; H01L29/10 ; H01L29/40 ; H01L21/762 ; H01L21/765
Abstract:
A lateral double diffused metal oxide semiconductor (LDMOS) transistor and a semiconductor can reduce the size of the entire power block and can decrease costs by preventing formation of an edge termination region between adjacent device tips or ends along a width direction when the corresponding LDMOS transistor cell has a limited width and the LDMOS transistor is a multi-finger LDMOS transistor.
Public/Granted literature
- US20210028307A1 LATERAL DOUBLE DIFFUSED METAL OXIDE SEMICONDUCTOR AND METHOD OF FABRICATING SAME Public/Granted day:2021-01-28
Information query
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