The present application discloses a semiconductor device with porous decoupling features and the method for fabricating the semiconductor device with the porous decoupling features. The semiconductor device comprises: a substrate; a first conductive line positioned on the substrate and extend along a first direction; a first conductive line spacer positioned on a sidewall of the first conductive line; a bottom contact positioned adjacent to the first conductive line; a bottom contact spacer positioned on a sidewall of the bottom contact; and a porous insulating layer positioned between the first conductive line spacer and the bottom contact spacer; wherein a porosity of the porous insulating layer is between about 25% and about 100%.