Invention Grant
- Patent Title: Semiconductor memory device and method of operating the semiconductor memory device
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Application No.: US17028628Application Date: 2020-09-22
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Publication No.: US11295816B2Publication Date: 2022-04-05
- Inventor: Hyun Kyu Park
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-si
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon-si
- Agency: William Park & Associates Ltd.
- Priority: KR10-2020-0044185 20200410
- Main IPC: G11C16/10
- IPC: G11C16/10 ; G11C16/08 ; G11C16/34 ; G11C16/30 ; G11C16/32 ; G11C16/26

Abstract:
Provided herein is a semiconductor memory device and a method of operating the semiconductor memory device. The semiconductor memory device includes: a memory cell array including a plurality of word lines; a peripheral circuit coupled to the memory cell array through the plurality of word lines and configured to apply a program voltage to a selected word line of the plurality of word lines during a program operation and apply a pass voltage to unselected word lines of the plurality of word lines; and control logic configured to control the peripheral circuit to apply a first pass voltage to word lines adjacent to the selected word line among the unselected word lines during a first program operation of the program operation and apply a second pass voltage to the word lines adjacent to the selected word line during a second program operation of the program operation.
Public/Granted literature
- US20210319830A1 SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATING THE SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2021-10-14
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