Invention Grant
- Patent Title: Wafer metrology technologies
-
Application No.: US16773693Application Date: 2020-01-27
-
Publication No.: US11293965B2Publication Date: 2022-04-05
- Inventor: Viktor Koldiaev , Marc Kryger , John Changala
- Applicant: FemtoMetrix, Inc.
- Applicant Address: US CA Irvine
- Assignee: FemtoMetrix, Inc.
- Current Assignee: FemtoMetrix, Inc.
- Current Assignee Address: US CA Irvine
- Agency: Knobbe, Martens, Olson & Bear, LLP
- Main IPC: G01N21/88
- IPC: G01N21/88 ; G01N21/95 ; G01N21/94 ; G01N21/63 ; G01R29/24 ; G01R31/265 ; G01R31/26 ; G01N27/00 ; H01L21/66 ; G01R31/308 ; G01R31/28

Abstract:
Various approaches can be used to interrogate a surface such as a surface of a layered semiconductor structure on a semiconductor wafer. Certain approaches employ Second Harmonic Generation and in some cases may utilize pump and probe radiation. Other approaches involve determining current flow from a sample illuminated with radiation. Decay constants can be measured to provide information regarding the sample. Additionally, electric and/or magnetic field biases can be applied to the sample to provide additional information.
Information query