Invention Grant
- Patent Title: Polycrystalline silicon rod manufacturing method, and reactor
-
Application No.: US17043769Application Date: 2019-03-27
-
Publication No.: US11293094B2Publication Date: 2022-04-05
- Inventor: Takafumi Tatsukawa , Yasumasa Aimoto
- Applicant: Tokuyama Corporation
- Applicant Address: JP Yamaguchi
- Assignee: Tokuyama Corporation
- Current Assignee: Tokuyama Corporation
- Current Assignee Address: JP Yamaguchi
- Agency: Cahn & Samuels, LLP
- Priority: JPJP2018-073258 20180405
- International Application: PCT/JP2019/013209 WO 20190327
- International Announcement: WO2019/194045 WO 20191010
- Main IPC: C23C16/24
- IPC: C23C16/24 ; C01B33/035 ; C23C16/455
Abstract:
A method of manufacturing polycrystalline silicon rod, wherein a reactor for manufacturing a polycrystalline silicon rod includes gas supply nozzles, and at least one nozzle is a flow rate amplification nozzle having a function that the amount of a silicon deposition raw material gas supplied to the nozzle can be increased.
Public/Granted literature
- US20210054499A1 Polycrystalline Silicon Rod Manufacturing Method, and Reactor Public/Granted day:2021-02-25
Information query
IPC分类:
