Invention Grant
- Patent Title: Water assisted highly pure ruthenium thin film deposition
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Application No.: US15863203Application Date: 2018-01-05
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Publication No.: US11293093B2Publication Date: 2022-04-05
- Inventor: Feng Q. Liu , Feng Chen , Jeffrey W. Anthis , David Thompson , Mei Chang
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Servilla Whitney LLC
- Main IPC: C23C16/06
- IPC: C23C16/06 ; C23C16/455 ; C23C16/18 ; H01L21/285 ; H01L21/3205 ; H01L21/768
Abstract:
Processing methods comprising exposing a substrate to a first reactive gas comprising an ethylcyclopentadienyl ruthenium complex or a cyclohexadienyl ruthenium complex and a second reactive gas comprising water to form a ruthenium film are described.
Public/Granted literature
- US20180195167A1 Water Assisted Highly Pure Ruthenium Thin Film Deposition Public/Granted day:2018-07-12
Information query
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