Invention Grant
- Patent Title: Phase change memory structure and the same
-
Application No.: US16883865Application Date: 2020-05-26
-
Publication No.: US11276818B2Publication Date: 2022-03-15
- Inventor: Jau-Yi Wu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, P.C., Intellectual Property Attorneys
- Agent Anthony King
- Main IPC: H01L23/58
- IPC: H01L23/58 ; H01L45/00 ; G11C13/00
Abstract:
The present disclosure provides a phase change memory structure, including a bottom electrode, a first phase change material contacting a top surface of the bottom electrode, a first switch over the first phase change material, a second phase change material over the first switch, and a top electrode over the second phase change material.
Public/Granted literature
- US20200287130A1 PHASE CHANGE MEMORY STRUCTURE AND THE SAME Public/Granted day:2020-09-10
Information query
IPC分类:
