Invention Grant
- Patent Title: Spin-orbit torque type magnetization reversal element, magnetic memory, and high frequency magnetic device
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Application No.: US17010329Application Date: 2020-09-02
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Publication No.: US11276815B2Publication Date: 2022-03-15
- Inventor: Tomoyuki Sasaki , Yohei Shiokawa
- Applicant: TDK CORPORATION
- Applicant Address: JP Tokyo
- Assignee: TDK CORPORATION
- Current Assignee: TDK CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: JP2016-210534 20161027,JP2017-138386 20170714
- Main IPC: H01L29/82
- IPC: H01L29/82 ; H01L43/04 ; G11C11/18 ; H01L43/02 ; H01L43/14 ; H01L43/08 ; H01L43/10 ; G11C11/16

Abstract:
A spin-orbit torque type magnetization reversal element including a magnetoresistance effect element that comprises a first ferromagnetic layer, a non-magnetic layer and a second ferromagnetic layer which are laminated in this order; and a spin-orbit torque wiring that laminates on the magnetoresistance effect element; wherein a first surface of the spin-orbit torque wiring on the magnetoresistance effect element side is parallel to a plane orthogonal to a laminating direction, and a second surface opposite to the first surface is non-parallel to the plane perpendicular to the stacking direction.
Information query
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