Invention Grant
- Patent Title: Semiconductor device for light detection
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Application No.: US16854133Application Date: 2020-04-21
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Publication No.: US11276787B2Publication Date: 2022-03-15
- Inventor: Daniel Gäbler
- Applicant: X-FAB Semiconductor Foundries GmbH
- Applicant Address: DE Erfurt
- Assignee: X-FAB Semiconductor Foundries GmbH
- Current Assignee: X-FAB Semiconductor Foundries GmbH
- Current Assignee Address: DE Erfurt
- Agency: Dority & Manning, P.A.
- Priority: GB1905789 20190425
- Main IPC: H01L31/02
- IPC: H01L31/02 ; H01L27/144 ; H01L49/02 ; H01L31/0216 ; H01L31/107 ; H01L31/18
Abstract:
A semiconductor device for light detection comprises: a photodiode comprising an optical active region; and a resistor connected to said photodiode and overlapping at least a part of said optical active region, wherein the resistor comprising an anti-reflective coating for reducing reflection loss.
Public/Granted literature
- US20200343389A1 Semiconductor Device for Light Detection Public/Granted day:2020-10-29
Information query
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