Invention Grant
- Patent Title: High capacity semiconductor device including bifurcated memory module
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Application No.: US16818752Application Date: 2020-03-13
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Publication No.: US11276669B2Publication Date: 2022-03-15
- Inventor: Xuyi Yang , Shineng Ma , Cong Zhang , Chin-Tien Chiu
- Applicant: WESTERN DIGITAL TECHNOLOGIES, INC.
- Applicant Address: US CA San Jose
- Assignee: WESTERN DIGITAL TECHNOLOGIES, INC.
- Current Assignee: WESTERN DIGITAL TECHNOLOGIES, INC.
- Current Assignee Address: US CA San Jose
- Agency: Vierra Magen Marcus LLP
- Priority: CN201910575708.2 20190628
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L25/065 ; H01L25/18 ; H01L23/00

Abstract:
A semiconductor device is disclosed including wafers of stacked integrated memory modules. A semiconductor device of the present technology may include multiple memory array semiconductor wafers, and a CMOS controller wafer, which together, operate as a single, integrated flash memory semiconductor device. In embodiments, the CMOS controller wafer may include semiconductor dies comprising ASIC logic circuits integrated together with memory array logic circuits.
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