Invention Grant
- Patent Title: Systems and methods for performing a write pattern in memory devices
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Application No.: US17038251Application Date: 2020-09-30
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Publication No.: US11275650B2Publication Date: 2022-03-15
- Inventor: Gary L. Howe
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Fletcher Yoder, P.C.
- Main IPC: G06F11/00
- IPC: G06F11/00 ; G06F11/10 ; G11C11/4063 ; G11C11/4076 ; G11C29/52 ; G11C7/22 ; G11C7/10 ; G11C29/04 ; G11C8/12

Abstract:
A semiconductor device may include a memory bank and a plurality of mode registers that communicatively couple to each of the plurality of memory banks. The plurality of mode registers may include a pattern of data stored therein. The semiconductor device may also include a bank control that receives a write pattern command that causes the bank control to write the pattern of data into the memory bank, send a signal to a multiplexer to couple the plurality of mode registers to the memory bank, and write the pattern of data to the memory bank via the plurality of mode registers.
Public/Granted literature
- US20210011803A1 SYSTEMS AND METHODS FOR PERFORMING A WRITE PATTERN IN MEMORY DEVICES Public/Granted day:2021-01-14
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