Invention Grant
- Patent Title: Method of forming semiconductor device having carbon nanotube
-
Application No.: US16387640Application Date: 2019-04-18
-
Publication No.: US11271163B2Publication Date: 2022-03-08
- Inventor: Martin Christopher Holland , Timothy Vasen , Blandine Duriez
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: H01L51/00
- IPC: H01L51/00 ; H01L51/05 ; C23C16/26 ; C30B29/02 ; C30B25/02 ; H01L51/10

Abstract:
In a method, a charged metal dot is deposited on a first position of a surface of a semiconductor substrate. Then, a charged region is formed on a second position of the surface of the semiconductor substrate, thereby establishing of which an electric field direction from the first position toward the second position. The first position is spaced apart from the second position by a distance. Thereafter, a precursor gas flows along the electric field direction on the semiconductor substrate, thereby forming a carbon nanotube (CNT) on the semiconductor substrate.
Public/Granted literature
- US20200335701A1 METHOD OF FORMING SEMICONDUCTOR DEVICE HAVING CARBON NANOTUBE Public/Granted day:2020-10-22
Information query
IPC分类: