Provided is a method of manufacturing a semiconductor device, the method including: forming a buffer layer of an insulating layer on a substrate; a seed layer formation operation of forming, on the buffer layer, a seed layer of at least one selected from the group consisting of NiCxOy, NiNxOy, NiCxNyOz, NiCxOy:H, NiNxOy:H, NiCxNyOz:H, NixSiy, and NixGey; a silicon layer formation operation of forming an amorphous silicon layer on the seed layer; and a crystallization operation of crystallizing the amorphous silicon layer by a catalytic action of Ni by thermally treating the amorphous silicon layer.