Invention Grant
- Patent Title: Spin-orbit-torque magnetoresistive memory cell with integrated selector elements and method of making the same
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Application No.: US16401172Application Date: 2019-05-02
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Publication No.: US11271035B2Publication Date: 2022-03-08
- Inventor: Lei Wan , Jordan Katine , Neil Robertson
- Applicant: Western Digital Technologies, Inc.
- Applicant Address: US CA San Jose
- Assignee: Western Digital Technologies, Inc.
- Current Assignee: Western Digital Technologies, Inc.
- Current Assignee Address: US CA San Jose
- Agency: The Marbury Law Group PLLC
- Main IPC: H01L27/22
- IPC: H01L27/22 ; H01L43/02 ; G11C11/16 ; H01L43/12 ; H01L43/08
Abstract:
A spin-orbit-torque (SOT) magnetoresistive random access memory (MRAM) device includes a SOT MRAM cell containing a first two terminal selector element, a nonmagnetic metallic assist plate, and a magnetic tunnel junction located between the first two terminal selector element and the nonmagnetic metallic assist plate, and a circuit selection element selected from a transistor or a second two terminal selector element electrically connected to the nonmagnetic metallic assist plate of the SOT MRAM cell.
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