Invention Grant
- Patent Title: Isolation in integrated circuit devices
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Application No.: US16483641Application Date: 2017-03-05
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Publication No.: US11270995B2Publication Date: 2022-03-08
- Inventor: Sang-Won Park , Dennis G. Hanken , Sishir Bhowmick , Leonard C. Pipes
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Patent Capital Group
- International Application: PCT/US2017/020842 WO 20170305
- International Announcement: WO2018/164655 WO 20180913
- Main IPC: H01L21/76
- IPC: H01L21/76 ; H01L27/088 ; H01L21/02

Abstract:
Disclosed herein are techniques for providing isolation in integrated circuit (IC) devices, as well as IC devices and computing systems that utilize such techniques. In some embodiments, a protective layer may be disposed on a structure in an IC device, prior to deposition of additional dielectric material, and the resulting assembly may be treated to form a dielectric layer around the structure.
Information query
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