Invention Grant
- Patent Title: Semiconductor device and method for manufacturing same
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Application No.: US16257100Application Date: 2019-01-25
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Publication No.: US11270934B2Publication Date: 2022-03-08
- Inventor: Takayuki Tajima , Kazuo Shimokawa
- Applicant: KABUSHIKI KAISHA TOSHIBA , KIOXIA CORPORATION
- Applicant Address: JP Minato-ku; JP Minato-ku
- Assignee: KABUSHIKI KAISHA TOSHIBA,KIOXIA CORPORATION
- Current Assignee: KABUSHIKI KAISHA TOSHIBA,KIOXIA CORPORATION
- Current Assignee Address: JP Minato-ku; JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JPJP2018-045555 20180313
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L25/065 ; H01L23/00 ; H01L23/31 ; H01L21/56 ; H01L23/532 ; H01L23/528 ; H05K1/11 ; H01L23/538

Abstract:
A semiconductor device includes a redistribution layer, a bump bonded to a first surface of the redistribution layer, and a chip bonded to a second surface of the redistribution layer. The redistribution layer includes an insulating layer, a conductive member connecting the bump to the chip and being provided inside the insulating layer, a bonding electrode connected between the conductive member and the bump, and a conductive layer provided between the insulating layer and the conductive member and between the bonding electrode and the conductive member. A resistivity of the conductive member is lower than a resistivity of the conductive layer.
Public/Granted literature
- US20190287895A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME Public/Granted day:2019-09-19
Information query
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