Invention Grant
- Patent Title: Semiconductor device
-
Application No.: US16755488Application Date: 2018-01-05
-
Publication No.: US11270929B2Publication Date: 2022-03-08
- Inventor: Naohiro Oogushi , Ryoji Murai , Takahiko Murakami
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- International Application: PCT/JP2018/000109 WO 20180105
- International Announcement: WO2019/135284 WO 20190711
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L21/66 ; H01L23/36 ; H01L25/04

Abstract:
A semiconductor chip (6) having flexibility is bonded to a heat radiation material (4) with solder. The semiconductor chip (6) is pressed by a tip of a pressing member (9,11) from an upper side. As a result, convex warpage of the semiconductor chip (6) can be suppressed. Furthermore, since voids can be prevented from remaining in the solder (7), the heat radiation of the semiconductor device can be enhanced.
Public/Granted literature
- US20210225743A1 SEMICONDUCTOR DEVICE Public/Granted day:2021-07-22
Information query
IPC分类: