An interconnect structure and techniques for fabrication thereof having a partial sidewall liner are provided. In one aspect, the interconnect structure includes: a substrate; a dielectric disposed on the substrate having at least one feature present therein; a barrier layer lining the at least one feature; a seed enhancement liner disposed over the barrier layer along sidewalls of the at least one feature, wherein the seed enhancement liner is present along only a middle portion of the sidewalls of the at least one feature; and at least one interconnect disposed within the at least one feature over the barrier layer and the seed enhancement liner.