Invention Grant
- Patent Title: Gas introduction structure, treatment apparatus, and treatment method
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Application No.: US16726638Application Date: 2019-12-24
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Publication No.: US11270895B2Publication Date: 2022-03-08
- Inventor: Katsutoshi Ishii
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Nath, Goldberg & Meyer
- Agent Jerald L. Meyer; Tanya E. Harkins
- Priority: JPJP2018-248239 20181228
- Main IPC: H01L21/67
- IPC: H01L21/67 ; H01L21/311 ; H01L21/02
Abstract:
A gas introduction structure includes: a gas introduction pipe inserted in a process chamber; and a discharge part covering an end portion of the gas introduction pipe at a side of the process chamber, and configured to discharge a gas supplied to the gas introduction pipe into the process chamber, wherein the discharge part includes a porous portion formed of a porous body, and a dense portion disposed at a location closer to a leading end of the discharge part than the porous portion and having a porosity lower than that of the porous portion.
Public/Granted literature
- US20200211866A1 GAS INTRODUCTION STRUCTURE, TREATMENT APPARATUS, AND TREATMENT METHOD Public/Granted day:2020-07-02
Information query
IPC分类:
