Invention Grant
- Patent Title: Semiconductor device having source/drain with a protrusion
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Application No.: US16869125Application Date: 2020-05-07
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Publication No.: US11270888B2Publication Date: 2022-03-08
- Inventor: Chia-Yang Wu , Shiu-Ko Jangjian , Keng-Chuan Chang , Ting-Siang Su
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: H01L21/285
- IPC: H01L21/285 ; H01L29/78 ; H01L29/165 ; H01L29/45 ; H01L29/66 ; H01L29/40 ; H01L29/417 ; H01L21/768
Abstract:
A device includes a source/drain (S/D) in a substrate and adjacent to a gate structure, wherein the S/D comprises a protrusion extending from a top surface of the S/D, and the protrusion has a tapered profile. The device further includes a contact plug electrically connected to the protrusion.
Public/Granted literature
- US20200266069A1 SEMICONDUCTOR DEVICE HAVING SOURCE/DRAIN WITH A PROTRUSION Public/Granted day:2020-08-20
Information query
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