- Patent Title: Film formation apparatus configured to supply mist of a solution to surface of a substrate and method of manufacturing semiconductor device using the film formation apparatus
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Application No.: US16741060Application Date: 2020-01-13
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Publication No.: US11270882B2Publication Date: 2022-03-08
- Inventor: Tatsuji Nagaoka , Hiroyuki Nishinaka , Daisuke Tahara , Masahiro Yoshimoto
- Applicant: Tatsuji Nagaoka , Hiroyuki Nishinaka , Daisuke Tahara , Masahiro Yoshimoto
- Applicant Address: JP Nagakute; JP Kyoto; JP Kyoto; JP Kyoto
- Assignee: Tatsuji Nagaoka,Hiroyuki Nishinaka,Daisuke Tahara,Masahiro Yoshimoto
- Current Assignee: Tatsuji Nagaoka,Hiroyuki Nishinaka,Daisuke Tahara,Masahiro Yoshimoto
- Current Assignee Address: JP Nagakute; JP Kyoto; JP Kyoto; JP Kyoto
- Agency: Sughrue Mion, PLLC
- Priority: JPJP2019-011144 20190125
- Main IPC: H01L21/02
- IPC: H01L21/02 ; B05B17/06

Abstract:
A film formation apparatus is configured to supply mist of a solution to a surface of a substrate so as to epitaxially grow a film on the surface of the substrate. The film formation apparatus may be provided with: a furnace configured to house and heat the substrate; a reservoir configured to store the solution; a heater configured to heat the solution in the reservoir; an ultrasonic transducer configured to apply ultrasound to the solution in the reservoir so as to generate the mist of the solution in the reservoir; and a mist supply path configured to carry the mist from the reservoir to the furnace.
Public/Granted literature
- US20200243333A1 FILM FORMATION APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2020-07-30
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