Invention Grant
- Patent Title: Memory system capable of reducing the reading time
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Application No.: US17187679Application Date: 2021-02-26
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Publication No.: US11270777B2Publication Date: 2022-03-08
- Inventor: Weirong Chen , Qiang Tang
- Applicant: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Applicant Address: CN Wuhan
- Assignee: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Current Assignee: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Current Assignee Address: CN Wuhan
- Agency: Bayes PLLC
- Main IPC: G11C16/30
- IPC: G11C16/30 ; G11C16/24 ; G11C16/28

Abstract:
A bias circuit includes a charging current reproduce unit, a cell current reproduce unit, a current comparator, and a bit line bias generator. The charging current reproduce unit generates a charging reference voltage according to a charging current flowing through a voltage bias transistor. The cell current reproduce unit generates a cell reference voltage according to a cell current flowing through a common source transistor. The current comparator includes a first current generator for generating a replica charging current according to the charging reference voltage, and a second current generator for generating a replica cell current according to the cell reference voltage. The bit line bias generator generates a bit line bias voltage to control a page buffer for charging a bit line according to a difference between the replica charging current and the replica cell current.
Public/Granted literature
- US20210183453A1 MEMORY SYSTEM CAPABLE OF REDUCING THE READING TIME Public/Granted day:2021-06-17
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