- Patent Title: Semiconductor device and semiconductor device fabrication method
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Application No.: US16586417Application Date: 2019-09-27
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Publication No.: US11267076B2Publication Date: 2022-03-08
- Inventor: Ryoji Okumoto
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kawasaki
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kawasaki
- Agency: Rabin & Berdo, P.C.
- Priority: JPJP2017-202252 20171019
- Main IPC: B23K26/20
- IPC: B23K26/20 ; B23K26/32 ; H01L21/60 ; H01L23/48 ; B23K26/21 ; B23K26/18 ; H01L23/488 ; H01L23/00 ; B23K103/10 ; B23K103/12

Abstract:
A semiconductor device, including a semiconductor element, and a first wiring member and a second wiring member bonded to each other and being electrically connected to the semiconductor element. The first wiring member has an irradiation area for receiving irradiation of a laser beam. The semiconductor device also includes a protection member disposed on an area of the second wiring member opposite the irradiation area of the first wiring member, the protection member having a melting point higher than a melting point of at least one of the first wiring member and the second wiring member including the area on which the protection member is disposed.
Public/Granted literature
- US20200023465A1 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE FABRICATION METHOD Public/Granted day:2020-01-23
Information query
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