Invention Grant
- Patent Title: Near-ultraviolet light-emitting semiconductor light-emitting element and group III nitride semiconductor template used therefor
-
Application No.: US16234933Application Date: 2018-12-28
-
Publication No.: US11264538B2Publication Date: 2022-03-01
- Inventor: Sung Min Hwang , In Sung Cho , Won Taeg Lim , Doo Soo Kim
- Applicant: Soft-Epi Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: Soft-Epi Inc.
- Current Assignee: Soft-Epi Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2016-0028850 20160310
- Main IPC: H01L33/22
- IPC: H01L33/22 ; H01L33/32 ; H01L33/12 ; H01L33/00 ; H01L33/20 ; H01L33/06
Abstract:
Disclosed is a Group III nitride semiconductor template for a 300-400 nm near-ultraviolet light emitting semiconductor device, the template including: a growth substrate; a nucleation layer based on AlxGa1-xN (0 y); and a monocrystalline Group III nitride semiconductor layer based on AlyGa1-yN (y>0), and a near-ultraviolet light emitting semiconductor device using the template.
Public/Granted literature
Information query
IPC分类:
