Invention Grant
- Patent Title: Semiconductor device and method for manufacturing semiconductor device
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Application No.: US16968796Application Date: 2019-02-19
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Publication No.: US11264511B2Publication Date: 2022-03-01
- Inventor: Shunpei Yamazaki , Haruyuki Baba , Shiori Murayama
- Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Applicant Address: JP Atsugi
- Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Current Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Current Assignee Address: JP Atsugi
- Agency: Fish & Richardson P.C.
- Priority: JPJP2018-034945 20180228
- International Application: PCT/IB2019/051309 WO 20190219
- International Announcement: WO2019/166914 WO 20190906
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L27/105 ; H01L27/12 ; H01L29/24 ; H01L21/02 ; H01L29/66
Abstract:
A semiconductor device with high on-state current is provided.
The semiconductor device includes a transistor. The transistor includes a first insulator; a first oxide over the first insulator; a second oxide over the first oxide; a third oxide; a first conductor and a second conductor over the second oxide; a second insulator; a third conductor; a fourth insulator over the first conductor and the second conductor; and a third insulator over the fourth insulator. An opening reaching the second oxide is provided in the third insulator and the fourth insulator. The third oxide is positioned to cover an inner wall of the opening. The second insulator is positioned to cover the inner wall of the opening with the third oxide therebetween. The third conductor is positioned to fill the opening with the third oxide and the second insulator therebetween. In the channel length direction of the transistor, an angle formed by a bottom surface of the first insulator and a side surface of the first conductor facing the second conductor is smaller than 90°.
The semiconductor device includes a transistor. The transistor includes a first insulator; a first oxide over the first insulator; a second oxide over the first oxide; a third oxide; a first conductor and a second conductor over the second oxide; a second insulator; a third conductor; a fourth insulator over the first conductor and the second conductor; and a third insulator over the fourth insulator. An opening reaching the second oxide is provided in the third insulator and the fourth insulator. The third oxide is positioned to cover an inner wall of the opening. The second insulator is positioned to cover the inner wall of the opening with the third oxide therebetween. The third conductor is positioned to fill the opening with the third oxide and the second insulator therebetween. In the channel length direction of the transistor, an angle formed by a bottom surface of the first insulator and a side surface of the first conductor facing the second conductor is smaller than 90°.
Information query
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