Disclosed is an LDMOS device comprising a drift region formed by a selected area of a doped layer of a first conductivity type on a semiconductor substrate, a gate structure comprising a gate dielectric layer and a gate conductive layer which are sequentially formed on a surface of the doped layer of the first conductivity type, a doped self-aligned channel region of a second conductivity type, and a doped layer formed by tilted ion implantation with a first side face of the gate structure as a self-alignment condition. A method for manufacturing an LDMOS device is further disclosed. The channel length is not affected by lithography and thus can be minimized to fulfill an ultralow specific-on-resistance, and the distribution uniformity of the channel length can be improved, so that the performance uniformity of the device is improved.