Invention Grant
- Patent Title: Structure and formation method of semiconductor device with gate stack
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Application No.: US17068537Application Date: 2020-10-12
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Publication No.: US11264484B2Publication Date: 2022-03-01
- Inventor: Che-Cheng Chang , Sheng-Chi Shih , Yi-Jen Chen
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/3213 ; H01L21/28 ; H01L29/423 ; H01L29/49 ; H01L29/51
Abstract:
A structure and a formation method of a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and a first gate electrode over the semiconductor substrate. The semiconductor device also includes a first gate dielectric layer between the first gate electrode and the semiconductor substrate. The semiconductor device further includes a second gate electrode over the semiconductor substrate. The second gate electrode has an upper portion and a lower portion between the upper portion and the semiconductor substrate, and the upper portion is wider than the lower portion. In addition, the semiconductor device includes a second gate dielectric layer between the second gate electrode and the semiconductor substrate.
Public/Granted literature
- US20210028296A1 Structure and Formation Method of Semiconductor Device with Gate Stack Public/Granted day:2021-01-28
Information query
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