Invention Grant
- Patent Title: Transistors with reduced defect and methods forming same
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Application No.: US16669695Application Date: 2019-10-31
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Publication No.: US11264478B2Publication Date: 2022-03-01
- Inventor: Shahaji B. More , Chandrashekhar Prakash Savant , Tien-Wei Yu , Chia-Ming Tsai
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L21/762 ; H01L21/28 ; H01L29/51 ; H01L29/78 ; H01L29/49 ; H01L29/161 ; H01L29/10 ; H01L29/66
Abstract:
A device includes a semiconductor region, an interfacial layer over the semiconductor region, the interfacial layer including a semiconductor oxide, a high-k dielectric layer over the interfacial layer, and an intermixing layer over the high-k dielectric layer. The intermixing layer includes oxygen, a metal in the high-k dielectric layer, and an additional metal. A work-function layer is over the intermixing layer. A filling-metal region is over the work-function layer.
Public/Granted literature
- US20210134974A1 Transistors with Reduced Defect and Methods Forming Same Public/Granted day:2021-05-06
Information query
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