Invention Grant
- Patent Title: Semiconductor device having multi-layer diffusion barrier and method of making the same
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Application No.: US16985276Application Date: 2020-08-05
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Publication No.: US11264467B2Publication Date: 2022-03-01
- Inventor: Jyh-nan Lin , Ding-I Liu , Yuh-Ta Fan
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: H01L29/12
- IPC: H01L29/12 ; H01L21/00 ; H01L29/26 ; H01L21/02 ; H01L21/768 ; H01L23/532
Abstract:
A semiconductor device includes a metal layer, an insulating layer disposed above the metal layer, and a multi-layer diffusion barrier disposed on the metal layer between the metal layer and the insulating layer. The multi-layer diffusion barrier includes a first material layer including a metallic nitride and a second material layer including a metallic oxide.
Information query
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