Invention Grant
- Patent Title: Silicon carbide devices and methods for forming silicon carbide devices
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Application No.: US16576042Application Date: 2019-09-19
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Publication No.: US11264464B2Publication Date: 2022-03-01
- Inventor: Hans-Joachim Schulze , Thomas Basler , Andre Rainer Stegner
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Cooper Legal Group LLC
- Priority: DE102018123210.1 20180920
- Main IPC: H01L29/167
- IPC: H01L29/167 ; H01L29/16 ; H01L29/739
Abstract:
A silicon carbide device includes a transistor cell with a front side doping region, a body region, and a drift region. The body region includes a first portion having a first average net doping concentration and a second portion having a second average net doping concentration. The first portion and the second portion have an extension of at least 50 nm in a vertical direction. The first average net doping concentration is at least two times the second average net doping concentration, and the first average net doping concentration is at least 1·1017 cm−3.
Public/Granted literature
- US20200098869A1 SILICON CARBIDE DEVICES AND METHODS FOR FORMING SILICON CARBIDE DEVICES Public/Granted day:2020-03-26
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