Invention Grant
- Patent Title: Stack capacitor structure and method for forming the same
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Application No.: US16892268Application Date: 2020-06-03
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Publication No.: US11264389B2Publication Date: 2022-03-01
- Inventor: Szu-Yao Chang
- Applicant: NANYA TECHNOLOGY CORPORATION
- Applicant Address: TW New Taipei
- Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee Address: TW New Taipei
- Agency: CKC & Partners Co. LLC
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L27/108 ; H01L49/02 ; H01L29/94

Abstract:
The stack capacitor structure includes a substrate, first, second, third, and fourth support layers, first, second, and third insulating layers, first, second, and third holes, and a capacitor. The first support layer is disposed over the substrate. The first insulating layer is disposed on the first support layer. The second support layer is disposed on the first insulating layer. The third support layer is disposed on the second support layer. The second insulating layer is disposed on the third support layer. The third insulating layer is disposed on the second insulating layer. The fourth support layer is disposed on the third insulating layer. The first hole penetrates through from the second support layer to the first support layer. The second and third holes penetrate through from the fourth support layer to the third support layer. The capacitor is disposed in the first, second, and third holes.
Public/Granted literature
- US20210384196A1 STACK CAPACITOR STRUCTURE AND METHOD FOR FORMING THE SAME Public/Granted day:2021-12-09
Information query
IPC分类: