Invention Grant
- Patent Title: Integrated circuit
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Application No.: US16724024Application Date: 2019-12-20
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Publication No.: US11264378B2Publication Date: 2022-03-01
- Inventor: Shao-Yu Chen , Chih-Ping Chao , Chun-Hung Chen , Chung-Long Chang , Kuan-Chi Tsai , Wei-Kung Tsai , Hsiang-Chi Chen , Ching-Chung Hsu , Cheng-Chang Hsu , Yi-Sin Wang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: H01L27/07
- IPC: H01L27/07 ; H01L49/02 ; H01L23/522

Abstract:
A device includes a dielectric layer, an interlayer metal pad in the dielectric layer, a first capacitor over the interlayer metal pad, and a second capacitor over the dielectric layer. The first capacitor includes a first bottom capacitor electrode over and in contact with the interlayer metal pad, a first top capacitor electrode, and a first inter-electrode dielectric layer between the first bottom capacitor electrode and the first top capacitor electrode. The second capacitor includes a second bottom capacitor electrode over and in contact with the dielectric layer, a second top capacitor electrode, and a second inter-electrode dielectric layer between the second bottom capacitor electrode and the second top capacitor electrode.
Information query
IPC分类: