Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16787643Application Date: 2020-02-11
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Publication No.: US11264375B2Publication Date: 2022-03-01
- Inventor: Naoki Takahashi
- Applicant: Rohm Co., Ltd.
- Applicant Address: JP Kyoto
- Assignee: Rohm Co., Ltd.
- Current Assignee: Rohm Co., Ltd.
- Current Assignee Address: JP Kyoto
- Agency: Fish & Richardson P.C.
- Priority: JPJP2019-22920 20190212
- Main IPC: H01L27/02
- IPC: H01L27/02
Abstract:
A semiconductor device has an N-type substrate, a through conductor penetrating the N-type substrate, a protection target circuit provided on the N-type substrate, and an ESD protection circuit provided on the N-type substrate. The protection target circuit and the ESD protection circuit are connected together to the through conductor.
Public/Granted literature
- US20200258880A1 SEMICONDUCTOR DEVICE Public/Granted day:2020-08-13
Information query
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