- Patent Title: Method of forming electrostatic discharge (ESD) testing structure
-
Application No.: US16996410Application Date: 2020-08-18
-
Publication No.: US11264374B2Publication Date: 2022-03-01
- Inventor: Tzu-Heng Chang , Jen-Chou Tseng , Ming-Hsiang Song
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H01L21/66 ; G01R31/00 ; G01R31/28 ; H01L23/62 ; H01L23/60 ; H01L25/00

Abstract:
A method of making an electrostatic discharge (ESD) testing structure includes forming, in a first die, a first measurement device. The method further includes forming, in a second die, a fuse, a first trim pad, and a second trim pad. The method further includes forming, between the first die and the second die, a plurality of electrical bonds, wherein a first bond of the plurality of bonds is electrically connected to the first trim pad and a first side of the fuse, and a second bond of the plurality of bonds is electrically connected to the second trim pad and a second side of the fuse.
Public/Granted literature
- US20200381419A1 METHOD OF FORMING ELECTROSTATIC DISCHARGE (ESD) TESTING STRUCTURE Public/Granted day:2020-12-03
Information query
IPC分类: