Invention Grant
- Patent Title: RF devices with enhanced performance and methods of forming the same
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Application No.: US16678551Application Date: 2019-11-08
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Publication No.: US11264347B2Publication Date: 2022-03-01
- Inventor: Julio C. Costa , Michael Carroll
- Applicant: Qorvo US, Inc.
- Applicant Address: US NC Greensboro
- Assignee: Qorvo US, Inc.
- Current Assignee: Qorvo US, Inc.
- Current Assignee Address: US NC Greensboro
- Agency: Withrow & Terranova, P.L.L.C.
- Main IPC: H01L29/40
- IPC: H01L29/40 ; H01L21/00 ; H01L23/00 ; H01L21/56 ; H01L23/66 ; H01L23/31
Abstract:
The present disclosure relates to a radio frequency (RF) device that includes a mold device die and a multilayer redistribution structure underneath the mold device die. The mold device die includes a device region with a back-end-of-line (BEOL) portion and a front-end-of-line (FEOL) portion over the BEOL portion, and a first mold compound. The FEOL portion includes an active layer formed from a strained silicon epitaxial layer, in which a lattice constant is greater than 5.461 at a temperature of 300K. The first mold compound resides over the active layer. Herein, silicon crystal does not exist between the first mold compound and the active layer. The multilayer redistribution structure includes a number of bump structures, which are at a bottom of the multilayer redistribution structure and electrically coupled to the FEOL portion of the mold device die.
Public/Granted literature
- US12046570B2 RF devices with enhanced performance and methods of forming the same Public/Granted day:2024-07-23
Information query
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