Invention Grant
- Patent Title: Semiconductor device and method for manufacturing same
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Application No.: US16265091Application Date: 2019-02-01
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Publication No.: US11264313B2Publication Date: 2022-03-01
- Inventor: Akito Shimizu , Yasuhisa Shintoku , Yoshihisa Imori , Hiroaki Kishi , Atsushi Hosokawa , Tomohiko Imada , Shinya Shimamura
- Applicant: Kabushiki Kaisha Toshiba , Toshiba Electronic Devices & Storage Corporation
- Applicant Address: JP Tokyo; JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba,Toshiba Electronic Devices & Storage Corporation
- Current Assignee: Kabushiki Kaisha Toshiba,Toshiba Electronic Devices & Storage Corporation
- Current Assignee Address: JP Tokyo; JP Tokyo
- Agency: Allen & Overy LLP
- Priority: JPJP2018-169857 20180911
- Main IPC: H01L21/48
- IPC: H01L21/48 ; H01L23/498 ; H01L23/00 ; H01L21/56

Abstract:
A semiconductor device includes a molded body and an interconnection layer. The molded body includes a semiconductor chip, at least one terminal body disposed around the semiconductor chip and a resin member provided between the semiconductor chip and the terminal body. The molded body has a first surface, a second surface opposite to the first surface and a side surface connected to the first and second surfaces. The interconnection layer is provided on the first surface of the molded body. The interconnection layer includes an interconnect electrically connecting the semiconductor chip and the terminal body. The terminal body has first and second contact surfaces. The first contact surface is exposed at the first or second surface of the molded body. The second contact surface is connected to the first contact surface and exposed at the side surface of the molded body.
Public/Granted literature
- US20200083150A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME Public/Granted day:2020-03-12
Information query
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