A method is presented for forming self-aligned vias by employing a top level line pattern. The method includes forming first conductive lines within a first dielectric material, recessing one conductive line of the conductive lines to define a first opening, filling the first opening with a second dielectric material, and forming a sacrificial block perpendicular to and in direct contact with a non-recessed first conductive line. The method further includes forming a single via directly underneath the sacrificial block by recessing the non-recessed first conductive line, removing the sacrificial block to define a second opening, and filling the second opening with a conductive material to define a second conductive line such that the single via aligns to both the non-recessed first conductive line and the second conductive line.